Raman Spectroscopy Applied To The Study Of A Memory Device Based On Organic Semiconductor

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Trabalho

Título do Trabalho

RAMAN SPECTROSCOPY APPLIED TO THE STUDY OF A MEMORY DEVICE BASED ON ORGANIC SEMICONDUCTOR

Autores

Marleane Maria Felix de Azevedo
Guilherme Severino Mendes de Araújo
Angel Alberto Hidalgo
Maria Leticia Vega
Cleânio da Luz Lima; UFPI

Modalidade

Apresentação - pôster (Clique aqui para saber os detalhes para submissão)

Área temática

Dispositivos eletrônicos e ópticos (OLED/OFET/OPVs/etc)

Data de Publicação

20/05/2022

País da Publicação

Brasil

Idioma da Publicação

Inglês

Página do Trabalho

https://www.even3.com.br/anais/workshopineo2022/473333-raman-spectroscopy-applied-to-the-study-of-a-memory-device-based-on-organic-semiconductor

ISBN

Palavras-Chave

Resistive memories, Raman spectroscopy, semiconductors

Resumo

The Raman spectroscopy technique has been an essential technique for characterizing polymeric materials. With Raman scattering, it is possible to map the vibrational modes and explain subtle chemical and structural differences in molecular systems. Therefore, it is possible to evaluate effects due to temperature1, structural/conformational changes2, and effects of device degradation3, which extends to differences in preparation conditions and effects of the interaction of metallic electrodes on molecules such as benzene4. In the present work, a device constructed using as a polymeric semiconductor layer was analyzed by Raman spectroscopy the poly (2–methoxy–5-(2'ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) sandwiched between two electrodes, Oxide of Indium-Tin (ITO) and Aluminum (Al) in order to characterize the polymer-metal interface. The device in question is a device that showed resistive memory behavior, whose aluminum electrode, after more than 100 cycles of erasing, reading, writing and reading, begins to show points or regions where the electrode has defects. Thus, using a confocal spectrometer, measurements were performed in three regions, on the surface of the polymeric film (control), in the polymer/Al interface region and a depth measurement starting from the glass substrate and crossing the ITO layer to the region of the movie. From this, the Raman spectra of MEH-PPV in the range of 900-1700 cm-1, which are dominated by the vibrational modes of the polymer main chain, were analyzed using intensity calculation and FWHM to evaluate possible spectral changes in the selected regions. It was observed that in the polymer-metal interface region, it retained similar characteristics of the spectrum of the polymeric surface region, thus indicating a weak interfacial interaction. In the work of Li et al. 7 the reduced interfacial interaction between the silver film and the MEH-PPV polymer is indicated due to the affinity that silver has with oxygen, thus being oxidized and causing the formation of a native oxide layer of silver. In the device used in this work, a similar situation may be occurring because aluminum has a high affinity for oxygen, which can lead to the formation of an aluminum oxide layer, thus explaining the reduction of the polymer-aluminum interaction. The importance of this result lies in the formation of resistive memories. Acknowledgments: financial support from CNPq grant number 465572/2014-6), the São Paulo Research Foundation (FAPESP) (2014/50869-6), and CAPES (Education Ministry) (23038.000776/201754) via the projects of the National Institute for Science and Technology on Organic Electronics (INEO). FINEP and FAPESP also financed laboratory Facilities. References 1BARRA, Alvaro CC; AMARAL, Thaeny C.; IZUMI, Celly. EFEITOS DA TEMPERATURA NOS ESPECTROS RAMAN DOS POLÍMEROS CONDUTORES PEDOT E MEH-PPV. Química Nova, v. 42, p. 1098-1103, 2019. 2MURAKI, Naoki; MIYAMOTO, Takashi; YOSHIKAWA, Masanobu. Depth profile analysis of organic multi-layer device with nanometer resolution using surface-enhanced Raman spectroscopy. Chemical Physics Letters, v. 499, n. 1-3, p. 158-160, 2010. 3GIORGETTI, E. et al. A study of the degradation of poly (3-octylthiophene)-based light emitting diodes by Surface Enhanced Raman Scattering. Applied Physics B, v. 79, n. 5, p. 603-609, 2004. 4SCHALNAT, Matthew C.; HAWKRIDGE, Adam M.; PEMBERTON, Jeanne E. Raman spectroscopy of the reaction of thin films of solid-state benzene with vapor-deposited Ag, Mg, and Al. The Journal of Physical Chemistry C, v. 115, n. 28, p. 13717-13724, 2011. 5BRUEVICH, V. V. et al. Raman spectroscopy of intermolecular charge transfer complex between a conjugated polymer and an organic acceptor molecule. The Journal of chemical physics, v. 127, n. 10, p. 104905, 2007. 6LI, Dongbo; J. BORYS, Nicholas; LUPTON, John M. Probing the electrodepolymer interface in conjugated polymer devices with surface-enhanced Raman scattering. Applied Physics Letters, v. 100, n. 14, p. 141907, 2012.

Título do Evento: Workshop INEO 2022
Título dos Anais do Evento: Anais do Workshop INEO 2022
Nome da Editora: Even3
Meio de Divulgação: Meio Digital

Como citar

AZEVEDO, Marleane Maria Felix de et al.. RAMAN SPECTROSCOPY APPLIED TO THE STUDY OF A MEMORY DEVICE BASED ON ORGANIC SEMICONDUCTOR.. In: Anais do 16° Workshop do Instituto Nacional de Eletrônica Orgânica. Anais...São Carlos(SP) IFSC, 2022. Disponível em: https//www.even3.com.br/anais/workshopINEO2022/473333-RAMAN-SPECTROSCOPY-APPLIED-TO-THE-STUDY-OF-A-MEMORY-DEVICE-BASED-ON-ORGANIC-SEMICONDUCTOR. Acesso em: 07/05/2025