Study Of The Electrical Properties Of Transport In Metal Oxides Transparent Semiconductors

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Trabalho

Título do Trabalho

STUDY OF THE ELECTRICAL PROPERTIES OF TRANSPORT IN METAL OXIDES TRANSPARENT SEMICONDUCTORS

Autores

B. Farias da Silva (ME); UNESP
Lucas Fugikawa Santos

Modalidade

Apresentação - pôster (Clique aqui para saber os detalhes para submissão)

Área temática

Síntese e caracterização de materiais

Data de Publicação

20/05/2022

País da Publicação

Brasil

Idioma da Publicação

Inglês

Página do Trabalho

https://www.even3.com.br/anais/workshopineo2022/474743-study-of-the-electrical-properties-of-transport-in-metal-oxides-transparent-semiconductors

ISBN

Palavras-Chave

metal oxides, semiconductor

Resumo

The Study of semiconductors still has great interest in the scientific environment, due to materials with these properties continuing to be used widely in all types of electronic devices such as computers, cellphones, laboratory equipment, medical instruments, among others. For that reason, metal oxides, which have semiconductors behavior, and their synthesis processes continue to be studied and refined, with the goal of improving these devices, making smaller components, higher resistivity in off regime, better mobility in on regime, and so on. In this research, we will make a brief analysis of the electrical properties of transparent semiconductor metal oxides thin film (zinc and indium oxide, IZO), in search of parameters that maximize the resistivity of the film, since a film with high conductivity in off-regime operating conditions do not present good results as the active layer of a transistor, as their on and off currents values is similar. The following factors were chosen to be varied, device structure, varying between contact over the film or under the film (top-contact and bottom-contact), the technique of sputtering, by using both non-reactive plasma (Ar) and reactive plasma (Ar+ O2), and concentration of oxygen in the environment atmosphere of characterizing (N2 inside a glovebox or ambient atmosphere), in order to observe the long-term effects. The variation of these factors within the group of samples was done using design of experiments (DOE), so that we can observe the greatest number of combinations of factors with the smallest group of samples possible. Through the transmission line measurement technique, we determine the resistivity and contact resistance of the devices formed by the thin film of IZO deposited by sputtering and the aluminum contacts deposited by thermal evaporation. Lastly, it was possible to observe the tendency that the variance of the factors had on the electrical properties of the device. ACKNOWLEDGEMENTS The authors acknowledge the financial support from Fundação de Amparo à Pesquisa no Estado de São Paulo – FAPESP (research grant # 2019/08019-9). This study was financed in part by Coordenação de Aperfeiçoamento de Pessoal de Nível Superior – Brasil (CAPES) – Finance Code 001.

Título do Evento: Workshop INEO 2022
Título dos Anais do Evento: Anais do Workshop INEO 2022
Nome da Editora: Even3
Meio de Divulgação: Meio Digital

Como citar

UNESP, B. Farias da Silva (ME);; SANTOS, Lucas Fugikawa. STUDY OF THE ELECTRICAL PROPERTIES OF TRANSPORT IN METAL OXIDES TRANSPARENT SEMICONDUCTORS.. In: Anais do 16° Workshop do Instituto Nacional de Eletrônica Orgânica. Anais...São Carlos(SP) IFSC, 2022. Disponível em: https//www.even3.com.br/anais/workshopINEO2022/474743-STUDY-OF-THE-ELECTRICAL-PROPERTIES-OF-TRANSPORT-IN-METAL-OXIDES-TRANSPARENT-SEMICONDUCTORS. Acesso em: 09/12/2024