INTERFACE ENGINEERING OF ZNO THIN FILMS

Carlos Vinicius Santos Batista; Raul Ramos; José Roberto Ribeiro Bortoleto; Carlos Alberto Rodrigues Costa; Flavio Leandro de Souza; Carlos César Bof Bufon

Todos os Trabalhos

Trabalho

Título do Trabalho

INTERFACE ENGINEERING OF ZNO THIN FILMS

Autores

Carlos Vinicius Santos Batista
Raul Ramos
José Roberto Ribeiro Bortoleto
Carlos Alberto Rodrigues Costa
Flavio Leandro de Souza
Carlos César Bof Bufon

Modalidade

Pôster - resumo

Área temática

Dispositivos eletrônicos, eletroquímicos, supercapacitores e baterias

Data de Publicação

27/05/2026

País da Publicação

Brasil

Idioma da Publicação

pt-BR

Página do Trabalho

https://www.even3.com.br/anais/workshop-do-ineo-2026/1464466-interface-engineering-of-zno-thin-films

ISBN

978-65-272-2467-9

Palavras-Chave

Interface, Surface potential, Atomic force microscopy, Kelvin probe force microscopy, Electronic device, Nanomembrane

Resumo

Developing advanced and efficient devices across various fields depends on a deep understanding of device architecture, material selection, and interfacial properties. Analyzing energy level alignment at interfaces in thin-film devices provides critical insights, including semiconductor electron/hole injection barriers, work function changes with film thickness, and interface charge density. These parameters are crucial for achieving an optimized device design. The integration of Atomic Force Microscopy (AFM) and Kelvin Probe Force Microscopy (KPFM) facilitates nanoscale characterization, establishing a direct correlation between electrostatic potential and film thickness [1]. This study focused on ZnO, a sustainable and transparent n-type semiconductor that absorbs UV light as the active material. Gold (Au), chromium (Cr*), and titanium (Ti*) were used as electrodes. We evaluated the surface potential of ZnO films (10-100 nm) deposited on these electrodes. The results show that ZnO surface potential on Au stabilizes for films thicker than 20 nm, indicating bulk behavior. In contrast, thicker films are required on Cr* and Ti* electrodes. Based on these findings, vertical junction devices with 25 and 105 nm ZnO films were fabricated. The self-rolled nanomembrane architecture [1] was used, featuring a bottom Au contact and a thin ZnO film connected to the Au nanomembrane electrode, ensuring smooth, deposition-defect-free contacts. Current-voltage measurements at varying temperatures were performed. Charge transport in ZnO thin films is governed by film thickness, temperature, and electric field intensity. The 25 nm films exhibit Ohmic conduction, thicker films (105 nm) transition to the Space Charge Limited Current (SCLC) regime at fields exceeding 33.4 kV/cm (T = 300K). The replacement of the Au bottom electrode with Cr* introduces rectifying behavior and triggers a Trap-Filled Limited Current (TFLC) regime between 32.4 kV/cm and 105.4 kV/cm, followed by a reversion to SCLC at higher field strengths. Acknowledgements: The authors acknowledge CAPES (001), CNPq (408449/2024-1, and 309011/2023-0), FAPESP (2025/27044-5, 2025/28416-3, and 2023/09820-2), Sibratec-Nano, and INEO. References: [1] C. V. S. Batista, L. Merces, C. A. R. Costa, D. H. S. De Camargo, C. C. B. Bufon, Adv. Funct. Mater, 32, 2108478 (2021).

Título do Evento: Workshop do INEO 2026
Cidade do Evento: Nazaré Paulista
Título dos Anais do Evento: Anais do Workshop do INEO 2026
Nome da Editora: Even3
Meio de Divulgação: Meio Digital

Como citar

BATISTA, Carlos Vinicius Santos et al.. INTERFACE ENGINEERING OF ZNO THIN FILMS.. In: Anais do Workshop do INEO 2026. Anais...Nazaré Paulista(SP) Hotel Estância Atibainha, 2026. Disponível em: https//www.even3.com.br/anais/workshop-do-ineo-2026/1464466-INTERFACE-ENGINEERING-OF-ZNO-THIN-FILMS. Acesso em: 11/08/2026