HONEY-GATED VERTICAL FIELD-EFFECT TRANSISTOR BASED ON ZINC OXIDE ACTIVE LAYER AND CARBON NANOTUBES ELECTRODES

Douglas Henrique Vieira; Gabriel Leonardo Nogueira (PD); UNESP-FC; Neri Alves

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Submission

Paper Title

HONEY-GATED VERTICAL FIELD-EFFECT TRANSISTOR BASED ON ZINC OXIDE ACTIVE LAYER AND CARBON NANOTUBES ELECTRODES

Authors

Douglas Henrique Vieira
Gabriel Leonardo Nogueira (PD); UNESP-FC
Neri Alves

Modality

Pôster

Subject area

Dispositivos eletrônicos e ópticos (OLED/OFET/OPVs/etc.)

Publishing Date

12/12/2023

Country of Publishing

Brasil

Language of Publishing

Inglês

Paper Page

https://www.even3.com.br/anais/workshop-do-ineo-2023/613260-honey-gated-vertical-field-effect-transistor-based-on-zinc-oxide-active-layer-and-carbon-nanotubes-electrodes

ISBN

978-65-272-0088-8

Keywords

transistor, printed electronics, ZnO, electrolyte, CNT

Summary

A channel length of approximately 10 micrometers typically yields high performance in transistors with planar architectures. However, the production of such channels requires the use of complex and expensive fabrication techniques, such as electron beam lithography and high-energy ion implantation, which necessitate high vacuum and are not compatible with large-area electronics. New architectures and configurations have been proposed as alternatives to improve performance without the need for using less sophisticated techniques. Among the new members of the transistor family, the vertical field-effect transistor (VFET) is one of the most promising. VFETs are fabricated by stacking conductive, dielectric, and semiconductor layers vertically. This design enables easy downscaling of the channel length to the thickness of the active layer, which enables high current density in nanosized channels. Another promising type of transistor is the electrolyte-gated transistors, in which the gate dielectric is replaced by an electrolyte allowing the gate voltage to modulate the conductivity of the channel by the formation of electrical double layers, resulting in high capacitance. Here, we present a device that combines these two approaches, namely, an electrolyte-gated vertical transistor (EGVT). We have fabricated a EGVT using Zinc Oxide (ZnO) as the active layer, Carbon Nanotubes (CNTs) as the intermediate electrode, and honey as the dielectric material. This novel combination of materials offers a promising transistor that presents high-performance with potential applications in printed, large-area and sustainable electronics. The CNT electrode was studied using AFM images, which revealed a network of well-distributed tubes with length of ~3 µm and thickness of ~20 nm. Furthermore, the sheet resistance of the electrode was found to be within the range of 1 kO/?. The diode cell, formed by the ZnO/CNT junction, was studied and revealed a rectification ratio of approximately 10^3. Similarly, the capacitive cell using honey as the dielectric material was studied separately, displaying a current in the order of 108 A, which is four orders of magnitude lower than the on-current achieved in the diode cell. Furthermore, the transistor's performance was evaluated through output and transfer plots in a low voltage range, resulting in an Ion/Ioff ˜ 10^3. While the results obtained are promising, there is still room for improvement and further work is required to optimize the performance of this EGVT. Nonetheless, it is worth highlighting that our findings demonstrate the potential for fabricating low-cost transistors using relatively simple techniques, paving the way for the development of more eco-friendly electronic devices. Acknowledgment The authors acknowledge the support of FAPESP (grant 2020/12282-4), CNPq, CAPES (Finance Code 001), INEO and POSMAT.

Title of the Event: Workshop do INEO 2023
City of the Event: Nazaré Paulista
Title of the Proceedings of the event: Anais do Workshop INEO 2023
Name of the Publisher: Even3
Means of Dissemination: Meio Digital

How to cite

VIEIRA, Douglas Henrique; UNESP-FC, Gabriel Leonardo Nogueira (PD);; ALVES, Neri. HONEY-GATED VERTICAL FIELD-EFFECT TRANSISTOR BASED ON ZINC OXIDE ACTIVE LAYER AND CARBON NANOTUBES ELECTRODES.. In: Anais do workshop INEO 2023. Anais...Nazaré Paulista(SP) Hotel Estância Atibainha, 2023. Available in: https//www.even3.com.br/anais/workshop-do-ineo-2023/613260-HONEY-GATED-VERTICAL-FIELD-EFFECT-TRANSISTOR-BASED-ON-ZINC-OXIDE-ACTIVE-LAYER-AND-CARBON-NANOTUBES-ELECTRODES. Access in: 07/10/2024